inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc p-channel mosfet transistor 2SJ376 description low drain-source on resistance high forward transfer admittance low leakage current enhancement-mode applications high speed switching application switching regulator ,dc-dc converter and motor drive application absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) -60 v v gs gate-source voltage 15 v i d drain current-continuous@ tc=37 -30 a p tot total dissipation@tc=25 50 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.1 /w r th j-a thermal resistance,junction to ambient 75 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc p-channel mosfet transistor 2SJ376 electrical characteristics (t c =25 ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = -1ma -60 v v gs(th) gate threshold voltage v ds = v gs ; i d = -1ma -1.0 -2.0 v r ds(on) drain-source on-stage resistance v gs = -10v; i d = -15a 0.045 i gss gate source leakage current v gs = -12v;v ds = 0 -10 ua i dss zero gate voltage drain current v ds = -60v,v gs = 0 -0.1 ma v sd diode forward voltage i f =-20a;v gs = 0 -1.5 v pdf pdffactory pro www.fineprint.cn
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